SUP75N05-06 - Vishay Siliconix

SUP75N05-06 N-Channel MOSFET

SUP/SUB75N05-06 Vishay Siliconix N-Channel 50-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 50 rDS(on) (W) 0.006 ID (A) 75 TO-220AB D TO-263 G DRAIN connected to TAB G G D S Top View SUP75N05-06 SUB75N05-06 N-Channel MOSFET D S Top View S ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Gate-Source Voltage Continuous Drain .

Features

d RthJA RthJC Symbol Limit 40 62.5 0.6 Unit Free Air (TO-220AB) _C/W 2-1 SUP/SUB75N05-06 Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 50 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 50 V, VGS = 0 V, TJ = 125_C VDS = 50 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 75 A Drain-Source On-State Resistancea rDS(on) VGS = 10 V, I.