SUP75N05-07 - Vishay Siliconix

SUP75N05-07 N-Channel MOSFET

SUP/SUB75N05-07 New Product Vishay Siliconix N-Channel 55-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 55 rDS(on) (W) 0.007 @ VGS = 10 V 0.009 @ VGS = 4.5 V ID (A) "75 a TO-220AB D TO-263 G DRAIN connected to TAB G G D S Top View SUP75N05-07 D S S N-Channel MOSFET Top View SUB75N05-07 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED.

Features

When mounted on 1” square PCB (FR-4 material). Document Number: 70871 S-60952—Rev. A, 19-Apr-99 www.vishay.com S FaxBack 408-970-5600 RthJA RthJC Symbol Limit 40 62.5 0.95 Unit _C/W 2-1 SUP/SUB75N05-07 Vishay Siliconix New Product SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 44 V, VGS = 0 V Zero Gate Voltage Drain Z G V l D i Current C IDSS VDS = 44 V, VGS = 0 V, TJ = 125_C VDS = 44 V, VGS = 0 V, TJ .