SUP75N06-08 - TEMIC Semiconductors

SUP75N06-08 N-Channel Enhancement-Mode Transistors

SUP/SUB75N06-08 N-Channel Enhancement-Mode Transistors Product Summary V(BR)DSS (V) 60 TO-220AB TO-263 G DRAIN connected to TAB G D S Top View SUB75N06-08 S N-Channel MOSFET rDS(on) (W) 0.008 ID (A) 75a D G D S Top View SUP75N06-08 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted) Parameter Gate-Source Voltage Continuous Drain Current (TJ = 175.

Features

ined via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document # 70283. A SPICE Model data sheet is available for this product (FaxBack document #70527). RthJA RthJC Symbol Limit 40 62.5 0.8 Unit _C/W Siliconix S-47969—Rev. D, 08-Jul-96 1 SUP/SUB75N06-08 Specifications (TJ = 25_C Unless Otherwise Noted) Parameter Static DrainĆSource Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS.