SUP/SUB75N03-04 Vishay Siliconix N-Channel 30-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) 0.004 ID (A) 75a TO-220AB TO-263 D G DRAIN connected to TAB DRAIN connected to TAB G D S G D S Top View SUP75N03-04 Top View SUB75N03-04 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Gate-Source V.
ackage limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material). For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70745 S-04137—Rev. E, 18-Jun-01 www.vishay.com Free Air (TO-220AB) RthJA RthJC Symbol Limit 40 62.5 0.6 Unit _C/W 2-1 SUP/SUB75N03-04 Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SUP75N03-07 |
Vishay Siliconix |
N-Channel MOSFET | |
2 | SUP75N05-06 |
Vishay Siliconix |
N-Channel MOSFET | |
3 | SUP75N05-07 |
Vishay Siliconix |
N-Channel MOSFET | |
4 | SUP75N06-07L |
Vishay Siliconix |
N-Channel MOSFET | |
5 | SUP75N06-08 |
TEMIC Semiconductors |
N-Channel Enhancement-Mode Transistors | |
6 | SUP75N06-08 |
Vishay Siliconix |
N-Channel MOSFET | |
7 | SUP75N06-12L |
Vishay Siliconix |
N-Channel MOSFET | |
8 | SUP75N08-09L |
Vishay Siliconix |
N-Channel MOSFET | |
9 | SUP75N08-10 |
Vishay |
N-Channel MOSFET | |
10 | SUP75P03-07 |
Vishay Siliconix |
P-Channel MOSFET | |
11 | SUP75P03-08 |
Vishay Siliconix |
P-Channel MOSFET | |
12 | SUP75P05-08 |
Vishay Siliconix |
P-Channel MOSFET |