SUP/SUB75N06-07L Vishay Siliconix N-Channel 60-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 60 0.0085 @ VGS = 4.5 V rDS(on) (W) 0.0075 @ VGS = 10 V ID (A) 75a TO-220AB D TO-263 G DRAIN connected to TAB G G D S Top View SUP75N06-07L D S S N-Channel MOSFET Top View SUB75N06-07L ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Paramete.
S-05111—Rev. F, 10-Dec-00 www.vishay.com Free Air (TO-220AB) RthJA RthJC Symbol Limit 40 62.5 0.6 Unit _C/W 2-1 SUP/SUB75N06-07L Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V, TJ = 125_C VDS = 60 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 30 A Drain-Source On-.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SUP75N06-08 |
TEMIC Semiconductors |
N-Channel Enhancement-Mode Transistors | |
2 | SUP75N06-08 |
Vishay Siliconix |
N-Channel MOSFET | |
3 | SUP75N06-12L |
Vishay Siliconix |
N-Channel MOSFET | |
4 | SUP75N03-04 |
Vishay Siliconix |
N-Channel MOSFET | |
5 | SUP75N03-07 |
Vishay Siliconix |
N-Channel MOSFET | |
6 | SUP75N05-06 |
Vishay Siliconix |
N-Channel MOSFET | |
7 | SUP75N05-07 |
Vishay Siliconix |
N-Channel MOSFET | |
8 | SUP75N08-09L |
Vishay Siliconix |
N-Channel MOSFET | |
9 | SUP75N08-10 |
Vishay |
N-Channel MOSFET | |
10 | SUP75P03-07 |
Vishay Siliconix |
P-Channel MOSFET | |
11 | SUP75P03-08 |
Vishay Siliconix |
P-Channel MOSFET | |
12 | SUP75P05-08 |
Vishay Siliconix |
P-Channel MOSFET |