SUB75P03-07, SUP75P03-07 Vishay Siliconix P-Channel 30 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) - 30 RDS(on) () 0.007 at VGS = - 10 V 0.010 at VGS = - 4.5 V ID (A)a ± 75 ± 75 TO-220AB TO-263 FEATURES • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DRAIN connected to TAB G DS Top View SUB75P03-07 GD S Top View SUP75P03-07 O.
• Compliant to RoHS Directive 2002/95/EC
Available
RoHS
*
COMPLIANT
DRAIN connected to TAB
G DS Top View
SUB75P03-07
GD S
Top View
SUP75P03-07
Ordering Information: SUB75P03-07 (TO-263) SUB75P03-07-E3 (TO-263, Lead (Pb)-free) SUP75P03-07 (TO-220AB) SUP75P03-07-E3 (TO-220AB, Lead (Pb)-free)
S G
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Gate-Source Voltage
Continuous Drain Current (TJ = 175 °C) Pulsed Drain Current
TC = 25 °C TC = 125 °C
Avalanche Current Repetitive Avalanche Energyb
L = 0.1 mH
Power Dissipation
TC = 25 °C (TO.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SUP75P03-08 |
Vishay Siliconix |
P-Channel MOSFET | |
2 | SUP75P05-08 |
Vishay Siliconix |
P-Channel MOSFET | |
3 | SUP75N03-04 |
Vishay Siliconix |
N-Channel MOSFET | |
4 | SUP75N03-07 |
Vishay Siliconix |
N-Channel MOSFET | |
5 | SUP75N05-06 |
Vishay Siliconix |
N-Channel MOSFET | |
6 | SUP75N05-07 |
Vishay Siliconix |
N-Channel MOSFET | |
7 | SUP75N06-07L |
Vishay Siliconix |
N-Channel MOSFET | |
8 | SUP75N06-08 |
TEMIC Semiconductors |
N-Channel Enhancement-Mode Transistors | |
9 | SUP75N06-08 |
Vishay Siliconix |
N-Channel MOSFET | |
10 | SUP75N06-12L |
Vishay Siliconix |
N-Channel MOSFET | |
11 | SUP75N08-09L |
Vishay Siliconix |
N-Channel MOSFET | |
12 | SUP75N08-10 |
Vishay |
N-Channel MOSFET |