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This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Product status link STS6P3LLH6 Product summary Order code STS6P3LLH6 Marking 6K3L Package SO-8 Packing Tape and reel DS9470 - Rev 3 - February 2021 For further in.
Order code
VDS
RDS(on) max.
ID
STS6P3LLH6
30 V
30 mΩ
6A
• Very low on-resistance
• Very low gate charge
• High avalanche ruggedness
• Low gate drive power loss
Applications
• Switching applications
Description
This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
Product status link STS6P3LLH6
Product summary
Order code
STS6P3LLH6
Marking
6K3L
Package
SO-8
Packing
Tape and reel
DS9470 - Rev 3 - February 2021 For further information contact y.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STS6PF30L |
STMicroelectronics |
P-CHANNEL POWER MOSFET |
|
| 2 | STS6308 |
SamHop Microelectronics |
N-Channel MOSFET |
|
| 3 | STS6409 |
SamHop Microelectronics |
P-Channel Enhancement Mode Field Effect Transistor |
|
| 4 | STS6415 |
SamHop Microelectronics |
P-Channel Enhancement Mode Field Effect Transistor |
|
| 5 | STS6601 |
SamHop Microelectronics |
P-Channel Enhancement Mode Field Effect Transistor |
|
| 6 | STS6604L |
SamHop |
Dual Enhancement Mode Field Effect Transistor |
|
| 7 | STS6DNF30L |
STMicroelectronics |
DUAL N - CHANNEL POWER MOSFET |
|
| 8 | STS6DNF30V |
STMicroelectronics |
DUAL N - CHANNEL POWER MOSFET |
|
| 9 | STS6N20 |
SamHop Microelectronics |
N-Channel MOSFET |
|
| 10 | STS6NF20V |
STMicroelectronics |
N-CHANNEL POWER MOSFET |
|
| 11 | STS-2308-01 |
STAR ACOUSTICS |
DYNAMIC MICRO SPEAKER |
|
| 12 | STS-8857 |
Silonex |
Transmissive Switch Assembly |
|