The STS-8857 consists of an infrared emitting diode and an NPN silicon phototransistor mounted on opposite sides of a 3.8 mm wide slot. Phototransistor switching takes place whenever an opaque object passes through the slot. The polysulfone housing (2) reduces interference from ambient light and provides dirt and dust protection. The 40 cm minimum length wir.
• Non contact switching
• Three wires for electrical connection
• Fast switching speed Description The STS-8857 consists of an infrared emitting diode and an NPN silicon phototransistor mounted on opposite sides of a 3.8 mm wide slot. Phototransistor switching takes place whenever an opaque object passes through the slot. The polysulfone housing (2) reduces interference from ambient light and provides dirt and dust protection. The 40 cm minimum length wires simplify the connection to the PC board. Absolute Maximum Ratings Operating & Storage Temperature Input Diode Reverse Voltage Continuous F.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STS-2308-01 |
STAR ACOUSTICS |
DYNAMIC MICRO SPEAKER | |
2 | STS01DTP06 |
ST Microelectronics |
Dual NPN-PNP complementary Bipolar transistor | |
3 | STS05DTP03 |
ST Microelectronics |
Dual NPN-PNP complementary bipolar transistor | |
4 | STS100 |
Solid State Optronic |
Multifunction Telecommunications Switch | |
5 | STS10100S |
JILIN SINO |
TRENCH SCHOTTKY BARRIER DIODE | |
6 | STS10DN3LH5 |
ST Microelectronics |
Power MOSFETs | |
7 | STS10NF30L |
ST Microelectronics |
N-CHANNEL PowerMESH MOSFET | |
8 | STS10P3LLH6 |
STMicroelectronics |
P-channel Power MOSFET | |
9 | STS10P4LLF6 |
STMicroelectronics |
P-Channel Power MOSFET | |
10 | STS10PF30L |
STMicroelectronics |
P-CHANNEL POWER MOSFET | |
11 | STS10T06 |
STANSON |
Low Vf Schottky Diode | |
12 | STS11NF30L |
ST Microelectronics |
N-CHANNEL PowerMESH MOSFET |