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STS6P3LLH6 |
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| Part Number | STS6P3LLH6 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Product stat... |
| Features |
Order code
VDS
RDS(on) max.
ID
STS6P3LLH6
30 V
30 mΩ
6A
• Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Product status link STS6P3LLH6 Product summary Order code STS6P3LLH6 Marking 6K3L Package SO-8 Packing Tape and reel DS9470 - Rev 3 - February 2021 For further information contact y... |
| Document |
 STS6P3LLH6 Data Sheet
PDF 301.35KB |
| Distributor | Stock | Price | Buy |
|---|
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|---|---|---|---|---|
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