STS6308 - SamHop Microelectronics

STS6308 N-Channel MOSFET

Green Product STS6308 Ver 1.0 S a mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 60V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ID 3A R DS(ON) (m Ω) Max 83 @ VGS= 10V 107 @ VGS= 4.5V D S OT 23 D S G G S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C.

Features

Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ID 3A R DS(ON) (m Ω) Max 83 @ VGS= 10V 107 @ VGS= 4.5V D S OT 23 D S G G S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a Limit 60 ±20 TC=25°C TC=70°C 3 2.4 11.4 23 TC=25°C TC=70°C 1.25 0.8 -55 to 150 Units V V A A A mJ W W °C Sigle Pulse Avalanche Energy Maximum Power Dissipation a Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS.