STS6409 - SamHop Microelectronics

STS6409 P-Channel Enhancement Mode Field Effect Transistor

r re Pro STS6409 Ver 1.0 S a mHop Microelectronics C orp. P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 49 @ VGS=-4.5V 50 @ VGS=-4.0V -20V -4.0A 52 @ VGS=-3.7V 58 @ VGS=-3.1V 65 @ VGS=-2.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D .

Features

Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D SOT 26 Top View D D G 1 2 3 6 5 4 D D S G S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a Limit -20 ±10 TA=25°C TA=70°C TA=25°C TA=70°C -4.0 -3.2 -15 a Units V V A A A W W °C Maximum Power Dissipation 1.25 0.8 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient .