Messrs : SPECIFICATION ITEM : DYNAMIC MICRO SPEAKER CUSTOMER’S MODEL : MODEL NUMBER : SIZE : STS-2308-01 Ø23 5.0T DATE OF APPROVAL 2007. 03.09 STAR ACOUSTICS CO. SEOJIN BLDG. 887-10, SHINCHUN-DONG, SHIHEUNG-SI, KYUNG GI-DO.KOREA. TEL : (031)404-4203 FAX : (031)318-8692 E-MAIL : [email protected] S-300-01(Rev.1) STAR ACOUSTICS CO. A4(210mmX2.
Density 84dB ± 3dB ( 1.0W/0.5m ) Average at 1.0k, 1.2k, 1.5k, 2.0kHz 8 ohm ± 15% at 1V, 1kHz Nominal 0.7W, Max 1.0W 600Hz ± 20% at 1V. 600Hz ~ 20kHz 5% max, at 1kHz, 0.7W ------------ Gauss Positive DC current is applied to the Terminal marked(+) should be moved Forward. Capable of withstand a 500g load for 3sec. Without resulting in any damage or rejection. Must be normal at 2.36V Sine wave between 600Hz to 20kHz 3.8 Polarity 3.9 Terminal Strength 3.10 Buzz & Rattle S-300-01(Rev.1) STAR ACOUSTICS CO. A4(210mmX297mm) STS-2308-01 DYNAMIC MICRO SPEAKER 4. Qualification test 4.1 All d.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STS-8857 |
Silonex |
Transmissive Switch Assembly | |
2 | STS01DTP06 |
ST Microelectronics |
Dual NPN-PNP complementary Bipolar transistor | |
3 | STS05DTP03 |
ST Microelectronics |
Dual NPN-PNP complementary bipolar transistor | |
4 | STS100 |
Solid State Optronic |
Multifunction Telecommunications Switch | |
5 | STS10100S |
JILIN SINO |
TRENCH SCHOTTKY BARRIER DIODE | |
6 | STS10DN3LH5 |
ST Microelectronics |
Power MOSFETs | |
7 | STS10NF30L |
ST Microelectronics |
N-CHANNEL PowerMESH MOSFET | |
8 | STS10P3LLH6 |
STMicroelectronics |
P-channel Power MOSFET | |
9 | STS10P4LLF6 |
STMicroelectronics |
P-Channel Power MOSFET | |
10 | STS10PF30L |
STMicroelectronics |
P-CHANNEL POWER MOSFET | |
11 | STS10T06 |
STANSON |
Low Vf Schottky Diode | |
12 | STS11NF30L |
ST Microelectronics |
N-CHANNEL PowerMESH MOSFET |