STS6601 - SamHop Microelectronics

STS6601 P-Channel Enhancement Mode Field Effect Transistor

Green Product STS6601 Ver 1.0 S a mHop Microelectronics C orp. P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS -60V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. SOT-26 package. ID -3.2A R DS(ON) (m Ω) Max 110 @ VGS=-10V 160 @ VGS=-4.5V S OT26 Top View D D D G 1 2 3 6 5 4 D D S G S ABSOLU.

Features

Super high dense cell design for low R DS(ON). Rugged and reliable. SOT-26 package. ID -3.2A R DS(ON) (m Ω) Max 110 @ VGS=-10V 160 @ VGS=-4.5V S OT26 Top View D D D G 1 2 3 6 5 4 D D S G S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a Limit -60 ±20 TA=25°C TA=70°C TA=25°C TA=70°C -3.2 -2.6 -12 a Units V V A A A W W °C Maximum Power Dissipation 2 1.28 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA The.