STS6N20 - SamHop Microelectronics

STS6N20 N-Channel MOSFET

Gr Pr STS6N20 Ver 1.0 S a mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 60V ID 0.8A R DS(ON) ( Ω) Max 1.05 @ VGS=10V 1.30 @ VGS=4.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Surface Mount Package. D S OT 23 D S G S G ABSOLUTE MAXIMUM RATINGS ( T A.

Features

Super high dense cell design for low R DS(ON). Rugged and reliable. Surface Mount Package. D S OT 23 D S G S G ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a Limit 60 ±20 TA=25°C TA=70°C TA=25°C TA=70°C 0.8 0.64 3 a Units V V A A A W W °C Maximum Power Dissipation 1.25 0.8 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 100 °C/W Details are subject to change withou.