STP18NM80 - INCHANGE

STP18NM80 N-Channel MOSFET

Isc N-Channel MOSFET Transistor ·FEATURES ·Typical RDS(on)=0.25Ω ·Low input capacitance and gate charge ·Low gate input resistances ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications INCHANGE Semiconductor STP18NM80 ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAM.

Features

·Typical RDS(on)=0.25Ω
·Low input capacitance and gate charge
·Low gate input resistances
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·APPLICATIONS
·Switching applications INCHANGE Semiconductor STP18NM80
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±30 17 10.7 68 PD Total Dissipation 190 Tj Operating Junction Temperature -65~150 Tstg Storage Temperature -65~150 UNIT V V .