STP18NM60ND - INCHANGE

STP18NM60ND N-Channel MOSFET

·Low Drain-Source On-Resistance APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS ID IDM PD TJ Tstg Drain-Source Voltage Gate-Source Voltage-Continuous Drain Current-Continuous Drain Current-Single Pluse Total Dissipation @TC=25℃ Max. Operating Junction Temperature Storage Temperature 600 V ±2.

Features

·Drain Current
  –ID= 13A@ TC=25℃
·Drain Source Voltage- : VDSS= 600V(Min)
·Static Drain-Source On-Resistance : RDS(on) = 290mΩ(Max)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
·Low Drain-Source On-Resistance APPLICATIONS
·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS ID IDM PD TJ Tstg Drain-Source Voltage Gate-Source Voltage-Continuous Drain Current-Continuous Drain Current-Single Pluse Total Dissipation @TC=25℃ Max. Operating Junction Temperature Storage Temperature .