STP18NM80 |
Part Number | STP18NM80 |
Manufacturer | INCHANGE |
Description | Isc N-Channel MOSFET Transistor ·FEATURES ·Typical RDS(on)=0.25Ω ·Low input capacitance and gate charge ·Low gate input resistances ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust dev... |
Features |
·Typical RDS(on)=0.25Ω ·Low input capacitance and gate charge ·Low gate input resistances ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications INCHANGE Semiconductor STP18NM80 ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±30 17 10.7 68 PD Total Dissipation 190 Tj Operating Junction Temperature -65~150 Tstg Storage Temperature -65~150 UNIT V V ... |
Document |
STP18NM80 Data Sheet
PDF 201.40KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
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1 | STP18NM80 |
STMicroelectronics |
N-channel Power MOSFET | |
2 | STP18NM60N |
ST Microelectronics |
Power MOSFET | |
3 | STP18NM60N |
INCHANGE |
N-Channel MOSFET | |
4 | STP18NM60ND |
STMicroelectronics |
N-channel Power MOSFET | |
5 | STP18NM60ND |
INCHANGE |
N-Channel MOSFET |