These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applicati.
TAB
Order code STF18N65M5 STI18N65M5 STP18N65M5 STW18N65M5
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■
■
■
VDSS @ TJmax
RDS(on) max
ID
3
3 12
1
2
TO-220FP
710 V
< 0.22 Ω
15 A
TAB
I²PAK
Worldwide best RDS(on)
* area Higher VDSS rating and high dv/dt capability Excellent switching performance 100% avalanche tested Figure 1. Internal schematic diagram
TO-220
3 1 2
2 1
3
TO-247
Applications
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Switching applications
$ 4!"
Description
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ ho.
Isc N-Channel MOSFET Transistor ·FEATURES ·Higher VDSS rating ·Excellent switching performance ·100% avalanche tested ·.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STP18N65M2 |
STMicroelectronics |
N-channel Power MOSFET | |
2 | STP18N60DM2 |
STMicroelectronics |
N-channel Power MOSFET | |
3 | STP18N60M2 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
4 | STP18N55M5 |
STMicroelectronics |
N-channel Power MOSFET | |
5 | STP18N55M5 |
INCHANGE |
N-Channel MOSFET | |
6 | STP18NM60N |
ST Microelectronics |
Power MOSFET | |
7 | STP18NM60N |
INCHANGE |
N-Channel MOSFET | |
8 | STP18NM60ND |
STMicroelectronics |
N-channel Power MOSFET | |
9 | STP18NM60ND |
INCHANGE |
N-Channel MOSFET | |
10 | STP18NM80 |
STMicroelectronics |
N-channel Power MOSFET | |
11 | STP18NM80 |
INCHANGE |
N-Channel MOSFET | |
12 | STP1806 |
ST Microelectronics |
N-Channel Power MOSFET |