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STP18NM60ND |
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| Part Number | STP18NM60ND |
| Manufacturer | INCHANGE |
| Description | ·Low Drain-Source On-Resistance APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS ID IDM PD TJ Tstg Drain-Source Voltage Gate-Source Volt... |
| Features |
·Drain Current –ID= 13A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 290mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Low Drain-Source On-Resistance APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS ID IDM PD TJ Tstg Drain-Source Voltage Gate-Source Voltage-Continuous Drain Current-Continuous Drain Current-Single Pluse Total Dissipation @TC=25℃ Max. Operating Junction Temperature Storage Temperature ... |
| Document |
 STP18NM60ND Data Sheet
PDF 271.40KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STP18NM60N |
ST Microelectronics |
Power MOSFET |
|
| 2 | STP18NM60N |
INCHANGE |
N-Channel MOSFET |
|
| 3 | STP18NM60ND |
STMicroelectronics |
N-channel Power MOSFET |
|
| 4 | STP18NM80 |
STMicroelectronics |
N-channel Power MOSFET |
|
| 5 | STP18NM80 |
INCHANGE |
N-Channel MOSFET |
|