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STP18N55M5 |
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| Part Number | STP18N55M5 |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor STP18N55M5 FEATURES ·Drain Current –ID=13A@ TC=25℃ ·Drain Source Voltage- : VDSS= 550V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 240mΩ(Max) ·100% avalanche ... |
| Features |
·Drain Current –ID=13A@ TC=25℃ ·Drain Source Voltage- : VDSS= 550V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 240mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max. Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 550 V ±25 V 13 A 52 A 90 ... |
| Document |
 STP18N55M5 Data Sheet
PDF 270.97KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | STP18N55M5 |
STMicroelectronics |
N-channel Power MOSFET |
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| 2 | STP18N60DM2 |
STMicroelectronics |
N-channel Power MOSFET |
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| 3 | STP18N60M2 |
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N-CHANNEL POWER MOSFET |
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| 4 | STP18N65M2 |
STMicroelectronics |
N-channel Power MOSFET |
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| 5 | STP18N65M5 |
STMicroelectronics |
N-channel Power MOSFET |
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