This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STL115N10F7AG Table 1: Device summary Marking Package 115N10F7 PowerFLAT™ 5x6 Packaging Tape and re.
Order code
VDS
STL115N10F7AG 100 V
RDS(on) max
6 mΩ
ID PTOT 107 A 136 W
AEC-Q101 qualified
Among the lowest RDS(on) on the market
Excellent FoM (figure of merit)
Low Crss/Ciss ratio for EMI immunity
High avalanche ruggedness
Applications
Switching applications
Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Order code STL115N10F7AG
Table 1: Device summary
Marking
Packa.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STL110N10F7 |
STMicroelectronics |
N-Channel Power MOSFET | |
2 | STL110N4F7AG |
STMicroelectronics |
Automotive-grade N-channel Power MOSFET | |
3 | STL110NS3LLH7 |
STMicroelectronics |
N-channel MOSFET | |
4 | STL117N4LF7AG |
STMicroelectronics |
Automotive-grade N-channel Power MOSFET | |
5 | STL11N3LLH6 |
STMicroelectronics |
N-channel Power MOSFET | |
6 | STL11N4LLF5 |
STMicroelectronics |
N-channel Power MOSFET | |
7 | STL11N60M2-EP |
STMicroelectronics |
N-channel Power MOSFET | |
8 | STL11N65M5 |
STMicroelectronics |
N-channel Power MOSFET | |
9 | STL11N6F7 |
STMicroelectronics |
N-channel Power MOSFET | |
10 | STL100N10F7 |
STMicroelectronics |
N-channel Power MOSFET | |
11 | STL100N3LLH6 |
ST Microelectronics |
N-Channel Power MOSFET | |
12 | STL100N3LLH7 |
ST Microelectronics |
Power MOSFETs N-channel 30V |