This device is an N-channel Power MOSFET based on MDmesh™ M5 innovative vertical process technology combined with the wellknown PowerMESH™ horizontal layout. The resulting product offers extremely low onresistance, making it particularly suitable for applications requiring high power and superior efficiency. S(2, 3, 4, 7, 8, 9) 1 NC Pin 1 identification .
Order code VDS @ Tj max. RDS(on) max ID
STL11N65M5
710 V
0.530 Ω 8.5 A
• Extremely low RDS(on)
• Low gate charge and input capacitance
• Excellent switching performance
• 100% avalanche tested
Applications
• Switching applications
Figure 1. Internal schematic diagrams
D(5, 6, 11, 12)
GSSS 10 9 8 7
G(10)
D 11 D 12
6D 5D
Description
This device is an N-channel Power MOSFET based on MDmesh™ M5 innovative vertical process technology combined with the wellknown PowerMESH™ horizontal layout. The resulting product offers extremely low onresistance, making it particularly suitable for app.
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1 | STL11N60M2-EP |
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2 | STL11N6F7 |
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3 | STL11N3LLH6 |
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4 | STL11N4LLF5 |
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5 | STL110N10F7 |
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6 | STL110N4F7AG |
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7 | STL110NS3LLH7 |
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8 | STL115N10F7AG |
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9 | STL117N4LF7AG |
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10 | STL100N10F7 |
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11 | STL100N3LLH6 |
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12 | STL100N3LLH7 |
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