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STL115N10F7AG |
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| Part Number | STL115N10F7AG |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charg... |
| Features |
Order code
VDS
STL115N10F7AG 100 V
RDS(on) max
6 mΩ
ID PTOT 107 A 136 W
AEC-Q101 qualified Among the lowest RDS(on) on the market Excellent FoM (figure of merit) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STL115N10F7AG Table 1: Device summary Marking Packa... |
| Document |
 STL115N10F7AG Data Sheet
PDF 941.58KB |
| Distributor | Stock | Price | Buy |
|---|
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|---|---|---|---|---|
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| 4 | STL117N4LF7AG |
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