This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. S(1, 2, 3) 1234 AM15810v1 Order code STL11N6F7 Marking 11N6F Table 1: Device summary Package PowerFLAT™ 3.3x3.3 .
Order code STL11N6F7
VDS 60 V
RDS(on) max. 12 mΩ
ID 11 A
Features
Among the lowest RDS(on) on the market
Excellent figure of merit (FoM)
Low Crss/Ciss ratio for EMI immunity
High avalanche ruggedness
Applications
Switching applications
Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
S(1, 2, 3)
1234
AM15810v1
Order code STL11N6F7
Marking 11N6F
Table 1: Device summary Packa.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STL11N60M2-EP |
STMicroelectronics |
N-channel Power MOSFET | |
2 | STL11N65M5 |
STMicroelectronics |
N-channel Power MOSFET | |
3 | STL11N3LLH6 |
STMicroelectronics |
N-channel Power MOSFET | |
4 | STL11N4LLF5 |
STMicroelectronics |
N-channel Power MOSFET | |
5 | STL110N10F7 |
STMicroelectronics |
N-Channel Power MOSFET | |
6 | STL110N4F7AG |
STMicroelectronics |
Automotive-grade N-channel Power MOSFET | |
7 | STL110NS3LLH7 |
STMicroelectronics |
N-channel MOSFET | |
8 | STL115N10F7AG |
STMicroelectronics |
Automotive-grade N-channel MOSFET | |
9 | STL117N4LF7AG |
STMicroelectronics |
Automotive-grade N-channel Power MOSFET | |
10 | STL100N10F7 |
STMicroelectronics |
N-channel Power MOSFET | |
11 | STL100N3LLH6 |
ST Microelectronics |
N-Channel Power MOSFET | |
12 | STL100N3LLH7 |
ST Microelectronics |
Power MOSFETs N-channel 30V |