STL100N10F7 - STMicroelectronics

STL100N10F7 N-channel Power MOSFET

This device is an N-channel Power MOSFET developed using the 7th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. S(1, 2, 3) 12 34 Top View AM15540v2 Order code STL100N10F7 Table 1. Device summary Marking Package 100N10F7 PowerFLAT™ 5x6 Packaging Tape and.

Features

1 2 3 4 PowerFLAT™ 5x6 Figure 1. Internal schematic diagram D(5, 6, 7, 8) 8 76 5 G(4) Order code STL100N10F7 VDSS RDS(on) max ID PTOT 100 V 0.0073 Ω 19 A 5 W
• Ultra low on-resistance
• 100% avalanche tested Applications
• Switching applications Description This device is an N-channel Power MOSFET developed using the 7th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. S(1, 2, 3) 12 34 Top View AM15540v2 Order code STL100N10F7 Table 1. Device summary Marking Package 100N10F7 .