STL110N10F7 - STMicroelectronics

STL110N10F7 N-Channel Power MOSFET

S(1, 2, 3) 12 34 Top View AM15540v2 This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Product status link STL110N10F7 Product summary Order code STL110N10F7 Ma.

Features

PowerFLAT 5x6 Order code VDS RDS(on) max. STL110N10F7 100 V 6 mΩ
• Among the lowest RDS(on) on the market
• Excellent FoM (figure of merit)
• Low Crss/Ciss ratio for EMI immunity
• High avalanche ruggedness ID 107 A PTOT 136 W D(5, 6, 7, 8) 8 76 5 Applications
• Switching applications G(4) Description S(1, 2, 3) 12 34 Top View AM15540v2 This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. .