STL11N60M2-EP - STMicroelectronics

STL11N60M2-EP N-channel Power MOSFET

This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very high frequency converters.

Features

Order code VDS RDS(on) max. STL11N60M2-EP 600 V 0.654 Ω
• Extremely low gate charge
• Excellent output capacitance (COSS) profile
• Very low turn-off switching losses
• 100% avalanche tested
• Zener-protected Applications G(4)
• Switching applications ID 5.5 A S(1, 2, 3) 12 34 Top View AM15540v1 Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching lo.