This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. S(1, 2, 3) Order code STL11N3LLH6 1234 AM15810v1 Table 1: Device summary Marking Package 11N3L PowerFLATTM 3.3x3.3 Packing Tape and reel February 2017 DocID1775.
Order code STL11N3LLH6
VDS 30 V
RDS(on) max 7.5 mΩ
ID 11 A
Very low on-resistance
Very low gate charge
High avalanche ruggedness
Low gate drive power loss
Applications
Switching applications
Description
This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
S(1, 2, 3)
Order code STL11N3LLH6
1234
AM15810v1
Table 1: Device summary
Marking
Package
11N3L
PowerFLATTM 3.3x3.3
Packing Tape and reel
February 2017
DocID17755 Rev 3
This is inform.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STL11N4LLF5 |
STMicroelectronics |
N-channel Power MOSFET | |
2 | STL11N60M2-EP |
STMicroelectronics |
N-channel Power MOSFET | |
3 | STL11N65M5 |
STMicroelectronics |
N-channel Power MOSFET | |
4 | STL11N6F7 |
STMicroelectronics |
N-channel Power MOSFET | |
5 | STL110N10F7 |
STMicroelectronics |
N-Channel Power MOSFET | |
6 | STL110N4F7AG |
STMicroelectronics |
Automotive-grade N-channel Power MOSFET | |
7 | STL110NS3LLH7 |
STMicroelectronics |
N-channel MOSFET | |
8 | STL115N10F7AG |
STMicroelectronics |
Automotive-grade N-channel MOSFET | |
9 | STL117N4LF7AG |
STMicroelectronics |
Automotive-grade N-channel Power MOSFET | |
10 | STL100N10F7 |
STMicroelectronics |
N-channel Power MOSFET | |
11 | STL100N3LLH6 |
ST Microelectronics |
N-Channel Power MOSFET | |
12 | STL100N3LLH7 |
ST Microelectronics |
Power MOSFETs N-channel 30V |