STL110N10F7 |
Part Number | STL110N10F7 |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | S(1, 2, 3) 12 34 Top View AM15540v2 This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reduc... |
Features |
PowerFLAT 5x6
Order code
VDS
RDS(on) max.
STL110N10F7
100 V
6 mΩ
• Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness ID 107 A PTOT 136 W D(5, 6, 7, 8) 8 76 5 Applications • Switching applications G(4) Description S(1, 2, 3) 12 34 Top View AM15540v2 This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. ... |
Document |
STL110N10F7 Data Sheet
PDF 872.47KB |
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