These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge .
Type STB85NF55T4
STP85NF55
VDS 55 V
• AEC-Q101 qualified
• Exceptional dv/dt capability
• 100% avalanche tested
• Low gate charge
RDS(on) max. 8.0 mΩ
ID 80 A
G(1) S(3)
Applications
• Switching applications
AM01475v1_noZen
Description
These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charg.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STB85NF55 |
ST Microelectronics |
N-channel Power MOSFET | |
2 | STB85NF55L |
ST Microelectronics |
N-channel Power MOSFET | |
3 | STB85NF3LL |
ST Microelectronics |
N-channel Power MOSFET | |
4 | STB85NF3LL-1 |
ST Microelectronics |
N-channel Power MOSFET | |
5 | STB85N15F4 |
STMicroelectronics |
Power MOSFET | |
6 | STB80B170 |
SEMIWILL |
Thyristor Surge Suppresser | |
7 | STB80L60 |
SamHop |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
8 | STB80N20M5 |
ST Microelectronics |
Power MOSFET | |
9 | STB80N4F6AG |
STMicroelectronics |
N-channel Power MOSFET | |
10 | STB80NE03L-06 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
11 | STB80NE06-10 |
ST Microelectronics |
N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET | |
12 | STB80NF03L-04 |
ST Microelectronics |
N-CHANNEL POWER MOSFET |