STB80N20M5 - ST Microelectronics

STB80N20M5 Power MOSFET

The devices are N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications.

Features

Type STB80N20M5 STP80N20M5
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■ VDSS @ TJmax 200 V RDS(on) max < 0.023 Ω ID 61 A 61 A 3 1 1 2 3 Amongst the best RDS(on)
* area High dv/dt capability Excellent switching performance Easy to drive 100% avalanche tested D2PAK TO-220 Application Switching applications Figure 1. Internal schematic diagram Description The devices are N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is un.