STB80NF03L-04 - ST Microelectronics

STB80NF03L-04 N-CHANNEL POWER MOSFET

This Power Mosfet is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density INTERNAL SCHEMATIC DIAGRAM for low on-resistance, rugged avalanche DataSheet4U.com characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibi.

Features

, AIR-BAG, LAMPDRIVERS, Etc. ) ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID I DM (
• ) P tot dv/dt Ts tg Tj March 2000 Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature o o o I2PAK TO-262 (suffix ”-1”) D2PAK TO-263 (suffix ”T4”) DataShee Value 30 30 ± 20 80 56 320 210 1.43 3.5 -65 to 175 175 ( 1.