STB80NE06-10 - ST Microelectronics

STB80NE06-10 N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET

TO-263 This Power MOSFET is the latest development of (suffix ”T4”) SGS-THOMSON unique ”Single Feature Size™ ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a INTERNAL SCHEMATIC DIAGRAM remarkable manufacturing reproducibil.

Features

e (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating F actor dv/dt T stg Tj Peak Diode Recovery voltage slope Storage T emperature Max. O perating Junction Temperature o o o Value 60 60 ± 20 80 57 320 150 1 7 -65 to 175 175 ( 1) ISD ≤ 80 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Uni t V V V A A A W W/ o C V/ ns o o C C (
•) Pulse width limited by safe operating area February 1998 1/8 DataSheet4U.com www.DataSheet4U.com STB80NE06-10 THERMAL DATA R t hj-.