STB80N4F6AG - STMicroelectronics

STB80N4F6AG N-channel Power MOSFET

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. S(3) Order code STB80N4F6AG AM01475v1_Tab Table 1: Device summary Marking Package 80N4F6 D²PAK Packaging Tape and Reel November 2015 DocID027978 Rev 2 This is i.

Features

Order code STB80N4F6AG VDS 40 V RDS(on) max. 6 mΩ ID 80 A
 Designed for automotive applications and AEC-Q101 qualified
 Very low on-resistance
 Very low gate charge
 High avalanche ruggedness
 Low gate drive power loss Applications
 Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. S(3) Order code STB80N4F6AG AM01475v1_Tab Table 1: Device summary Marking Package 80N4F6 D²PAK Packaging Tape and Reel Novem.