STB85NF55 - ST Microelectronics

STB85NF55 N-channel Power MOSFET

* 6 $0Y These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DCDC converters for telecom and computer applications, and applications.

Features

Order codes VDS @ TJmax RDS(on) max ID STB85NF55T4 STP85NF55 55 V 0.008 Ω 80 A
• Designed for automotive applications and AEC-Q101 qualified
• Exceptional dv/dt capability
• 100% avalanche tested Figure 1. Internal schematic diagram Applications
• Switching applications '7$%ĆRUĆ Description
* 6 $0Y These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DCDC.