The STB80B170 is a Bi-directional TSS (Thyristor Surge Suppressors). It is specifically designed to protect telephones, fax machines, communication connections,modems, video lines and so on. The STB80B170 is used to enable equipment to meet various regulatory requirements including IEC 61000-4-5, GR-1089-CORE, ITU-T K.20, K.21 and K.45, IEC 60950,UL 60950, a.
> Excellent capability of absorbing transient surge > Quick response to surge voltage > Eliminates overvoltage caused by fast rising transients > Solid-state silicon technology, non degenerative APPLICATIONS > POE > Network and telecom > Data lines and security systems > Serial ports PART NUMBER AND ELECTRICAL PARAMETER @ T=25℃ RH = 45%-75% PART VDRM IDRM VS IS VT NUMBER V uA V mA V Max Max Max IT A DO-214AA PACKAGE 12 SCHEMATIC SYMBOL IH CO mA pF Min Typ STB80B170 170 5 220 1、Vs is measured at 100KV/S 2、Off-state capacitance is measure.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STB80L60 |
SamHop |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
2 | STB80N20M5 |
ST Microelectronics |
Power MOSFET | |
3 | STB80N4F6AG |
STMicroelectronics |
N-channel Power MOSFET | |
4 | STB80NE03L-06 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
5 | STB80NE06-10 |
ST Microelectronics |
N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET | |
6 | STB80NF03L-04 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
7 | STB80NF03L-04-1 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
8 | STB80NF03L-04T |
ST Microelectronics |
N-channel Power MOSFET | |
9 | STB80NF03L-04T-1 |
ST Microelectronics |
N-channel Power MOSFET | |
10 | STB80NF06 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
11 | STB80NF10 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
12 | STB80NF12 |
ST Microelectronics |
N-CHANNEL POWER MOSFET |