Green Product STB/P80L60 Ver2.0 S a mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 60V FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. ID 80A R DS(ON) (m Ω) Typ 9.5 @ VGS=10V 13.5 @ VGS=4.5V D D G D S.
Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. ID 80A R DS(ON) (m Ω) Typ 9.5 @ VGS=10V 13.5 @ VGS=4.5V D D G D S G S G S TP S E R IE S TO-220 S TB S E R IE S TO-263(DD-P AK) S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a Limit 60 ±20 TC=25°C TC=70°C 80 68 250 420 TC=25°C TC=70°C 130 91 -55 to 175 Units V V A A A mJ W W °C Single Pulse Avalanche Energy Maximum Pow.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STB80B170 |
SEMIWILL |
Thyristor Surge Suppresser | |
2 | STB80N20M5 |
ST Microelectronics |
Power MOSFET | |
3 | STB80N4F6AG |
STMicroelectronics |
N-channel Power MOSFET | |
4 | STB80NE03L-06 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
5 | STB80NE06-10 |
ST Microelectronics |
N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET | |
6 | STB80NF03L-04 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
7 | STB80NF03L-04-1 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
8 | STB80NF03L-04T |
ST Microelectronics |
N-channel Power MOSFET | |
9 | STB80NF03L-04T-1 |
ST Microelectronics |
N-channel Power MOSFET | |
10 | STB80NF06 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
11 | STB80NF10 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
12 | STB80NF12 |
ST Microelectronics |
N-CHANNEL POWER MOSFET |