STB80NF03L-04T-1 - ST Microelectronics

STB80NF03L-04T-1 N-channel Power MOSFET

This MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITC.

Features

TYPE STB80NF03L-04T STB80NF03L-04T-1 s s s Figure 1: Package RDS(on) < 0.004 Ω < 0.004 Ω ID (1) 80 A 80 A VDSS 30 V 30 V TYPICAL RDS(on) = 0.0035 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED 3 1 3 12 DESCRIPTION This MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING D2PAK I2P.