STB80NF55-06 - ST Microelectronics

STB80NF55-06 N-CHANNEL POWER MOSFET

This Power Mosfet is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transiINTERNAL SCHEMATIC DIAGRAM stor shows extremely high packing density for low DataSheet4U.com on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibil.

Features

M RATINGS Symbol V DS V DGR V GS ID ID I DM (
• ) P tot dv/dt Ts tg Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature o o o I2PAK TO-262 (suffix ”-1”) D2PAK TO-263 (suffix ”T4”) DataShee Value 55 55 ± 20 80 57 320 210 1.43 7 -65 to 175 175 ( 1) ISD ≤ 80 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX .