STB80NF55-06-1 - STMicroelectronics

STB80NF55-06-1 N-CHANNEL POWER MOSFET

This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Internal schematic diagram Applicatio.

Features

Type STB80NF55-06 STB80NF55-06-1 STP80NF55-06 STP80NF55-06FP 1. Limited by package
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■ VDSS 55V 55V 55V 55V RDS(on) <0.0065Ω ID 80A(1) TO-220 3 1 2 1 3 2 <0.0065Ω 80A (1) <0.0065Ω 80A (1) <0.0065Ω 60A (1) TO-220FP Exceptional dv/dt capability 100% avalanche tested Application oriented characterization 3 1 3 12 D²PAK I²PAK Description This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical a.