This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGR.
0NF03L-04 STB80NF03L-04T4 STP80NF03L-04 STB80NF03L-04-1 MARKING 80NF03L-04 @ 80NF03L-04 @ 80NF03L-04 @ 80NF03L-04 @ PACKAGE D2PAK D2PAK TO-220 I2PAK PACKAGING TUBE TAPE & REEL TUBE TUBE
ABSOLUTE MAXIMUM RATINGS Symbol Parameter VDS Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) VDGR VGS Gate- source Voltage Drain Current (continuous) at TC = 25°C ID(
*
*) Drain Current (continuous) at TC = 100°C ID(
*
*) IDM(
•) Drain Current (pulsed) Ptot Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope dv/dt (1) EAS (2) Single Pulse Avalanche Energy Tstg Storage T.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | STB80NF03L-04 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
2 | STB80NF03L-04T |
ST Microelectronics |
N-channel Power MOSFET | |
3 | STB80NF03L-04T-1 |
ST Microelectronics |
N-channel Power MOSFET | |
4 | STB80NF06 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
5 | STB80NF10 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
6 | STB80NF12 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
7 | STB80NF55-06 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
8 | STB80NF55-06-1 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
9 | STB80NF55-06T |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
10 | STB80NF55-06T4 |
STMicroelectronics |
N-CHANNEL POWER MOSFET | |
11 | STB80NF55-08 |
ST Microelectronics |
N-CHANNEL POWER MOSFET | |
12 | STB80NF55-08-1 |
ST Microelectronics |
N-CHANNEL POWER MOSFET |