MOSFETs Silicon P-Channel MOS SSM6J512NU 1. Applications • Power Management Switches 2. Features (1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 24.0 mΩ (typ.) (@VGS = -1.8 V) RDS(ON) = 18.3 mΩ (typ.) (@VGS = -2.5 V) RDS(ON) = 14.3 mΩ (typ.) (@VGS = -4.5 V) 3. Packaging and Pin Assignment UDFN6B SSM6J512NU 1,2,5,6: Drain 3: Gate.
(1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance
: RDS(ON) = 24.0 mΩ (typ.) (@VGS = -1.8 V) RDS(ON) = 18.3 mΩ (typ.) (@VGS = -2.5 V) RDS(ON) = 14.3 mΩ (typ.) (@VGS = -4.5 V)
3. Packaging and Pin Assignment
UDFN6B
SSM6J512NU
1,2,5,6: Drain 3: Gate 4: Source
©2015-2021
1
Toshiba Electronic Devices & Storage Corporation
Start of commercial production
2015-07
2021-09-17 Rev.2.0
SSM6J512NU
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25
�)
Characteristics
Symbol
Rating
Unit
Drain-source voltage Gate-source voltage
VDSS
-12
V
VGSS
±10
V
Drai.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSM6J511NU |
Toshiba |
Silicon P-Channel MOSFET | |
2 | SSM6J51TU |
Toshiba Semiconductor |
Silicon P-Channel MOSFET | |
3 | SSM6J501NU |
Toshiba |
P-Channel MOSFET | |
4 | SSM6J502NU |
Toshiba Semiconductor |
Silicon P-Channel MOSFET | |
5 | SSM6J503NU |
Toshiba Semiconductor |
Silicon P-Channel MOSFET | |
6 | SSM6J505NU |
Toshiba Semiconductor |
Silicon P-Channel MOSFET | |
7 | SSM6J507NU |
Toshiba |
Silicon P-Channel MOSFET | |
8 | SSM6J50TU |
Toshiba Semiconductor |
Silicon P-Channel MOSFET | |
9 | SSM6J53FE |
Toshiba Semiconductor |
High Current Switching Applications | |
10 | SSM6J06FU |
Toshiba Semiconductor |
Power Management Switch | |
11 | SSM6J07FU |
Toshiba Semiconductor |
Power Management Switch | |
12 | SSM6J08FU |
Toshiba Semiconductor |
Silicon P-Channel MOSFET |