SSM6J50TU - Toshiba Semiconductor

SSM6J50TU Silicon P-Channel MOSFET

SSM6J50TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ) SSM6J50TU ○ High Current Switching Applications Unit: mm • Compact package suitable for high-density mounting • Low on-resistance: Ron = Ron = Ron = 205mΩ (max) (@VGS = -2.0 V) 100mΩ (max) (@VGS = -2.5 V) 64mΩ (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25°C) Chara.

Features

. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board. (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2 ) Marking 654 Equivalent Circuit 654 KPB 123 123 Handling Precaution When handling individual devices that are not yet mounted on a circuit board, be sure that the enviro.