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SSM6J512NU |
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| Part Number | SSM6J512NU |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | MOSFETs Silicon P-Channel MOS SSM6J512NU 1. Applications • Power Management Switches 2. Features (1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 24.0 mΩ (typ.) (@VGS = -1.... |
| Features |
(1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance
: RDS(ON) = 24.0 mΩ (typ.) (@VGS = -1.8 V) RDS(ON) = 18.3 mΩ (typ.) (@VGS = -2.5 V) RDS(ON) = 14.3 mΩ (typ.) (@VGS = -4.5 V)
3. Packaging and Pin Assignment
UDFN6B
SSM6J512NU
1,2,5,6: Drain 3: Gate 4: Source
©2015-2021
1
Toshiba Electronic Devices & Storage Corporation
Start of commercial production
2015-07
2021-09-17 Rev.2.0
SSM6J512NU
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �)
Characteristics
Symbol
Rating
Unit
Drain-source voltage Gate-source voltage
VDSS
-12
V
VGSS
±10
V
Drai... |
| Document |
 SSM6J512NU Data Sheet
PDF 437.09KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SSM6J511NU |
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| 2 | SSM6J51TU |
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| 3 | SSM6J501NU |
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| 4 | SSM6J502NU |
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| 5 | SSM6J503NU |
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