SSM6J507NU - Toshiba

SSM6J507NU Silicon P-Channel MOSFET

MOSFETs Silicon P-Channel MOS (U-MOS) SSM6J507NU 1. Applications • Power Management Switches 2. Features (1) 4 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 20 mΩ (max) (@VGS = -10 V) RDS(ON) = 28 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 32 mΩ (max) (@VGS = -4.0 V) 3. Packaging and Pin Assignment UDFN6B SSM6J507NU 1.2.5.6 Drain 3. Gate 4. .

Features

(1) 4 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 20 mΩ (max) (@VGS = -10 V) RDS(ON) = 28 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 32 mΩ (max) (@VGS = -4.0 V) 3. Packaging and Pin Assignment UDFN6B SSM6J507NU 1.2.5.6 Drain 3. Gate 4. Source ©2015 Toshiba Corporation 1 Start of commercial production 2015-05 2015-11-10 Rev.2.0 SSM6J507NU 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Drain-source voltage VDSS -30 V Gate-source voltage VGSS -25 / +20 Drain current (DC) (Note 1) ID -10 A Drain cur.