SSM6J08FU - Toshiba Semiconductor

SSM6J08FU Silicon P-Channel MOSFET

SSM6J08FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) SSM6J08FU Power Management Switch DC-DC Converter Unit: mm • Small Package • Low on Resistance : Ron = 0.18 Ω (max) (@VGS = −4 V) : Ron = 0.26 Ω (max) (@VGS = −2.5 V) • Low Gate Threshold Voltage Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drai.

Features

solute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.32 mm2 × 6) Fig: 1. Note 2: The pulse width limited by max channel temperature. Marking Equivalent Circuit Fig 1: 25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.32 mm2 × 6 654 654 0.4 mm KDD 0.8 mm 123 123 Handling Precaution When handling individ.