SSM6J51TU - Toshiba Semiconductor

SSM6J51TU Silicon P-Channel MOSFET

SSM6J51TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) SSM6J51TU High Current Switching Applications Unit: mm • Suitable for high-density mounting due to compact package • Low on-resistance: Ron = 54 mΩ (max) (@VGS = -2.5 V) 85 mΩ (max) (@VGS = -1.8 V) 150mΩ(max) (@VGS = -1.5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristi.

Features

erature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2) Marking Equivalent Circuit (top view) 654 654 KPC 123 123 Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), ensure that the environ.