SSM6J07FU - Toshiba Semiconductor

SSM6J07FU Power Management Switch

SSM6J07FU TOSHIBA Transistor Silicon P Channel MOS Type SSM6J07FU Power Management Switch High Speed Switching Applications • • Small package Low on resistance Unit: mm : Ron = 450 mΩ (max) (VGS = −10 V) www.DataSheet4U.com : Ron = 800 mΩ (max) (VGS = −4 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain.

Features

reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.32 mm × 6) Marking Equivalent Circuit (top view) 6 Figure 1: 25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.32 mm2 × 6 6 5 4 5 4 0.4 mm 0.8 mm KDF 1 2 3 1 2 3 1 2007-11-01 SSM6J07FU Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment.