MOSFETs Silicon P-Channel MOS (U-MOS�) SSM6J505NU 1. Applications • Power Management Switches 2. Features (1) 1.2 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 61 mΩ (max) (@VGS = -1.2 V) RDS(ON) = 30 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 21 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 16 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 12 mΩ (max) (@VGS = -4.5 .
(1) 1.2 V gate drive voltage. (2) Low drain-source on-resistance
: RDS(ON) = 61 mΩ (max) (@VGS = -1.2 V) RDS(ON) = 30 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 21 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 16 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 12 mΩ (max) (@VGS = -4.5 V)
3. Packaging and Pin Assignment
UDFN6B
SSM6J505NU
1.2.5.6 Drain 3. Gate 4. Source
©2018-2021
1
Toshiba Electronic Devices & Storage Corporation
Start of commercial production
2012-05
2021-09-17 Rev.5.0
SSM6J505NU
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25
�)
Characteristics
Symbol
Rating
Unit
Drain-sou.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SSM6J501NU |
Toshiba |
P-Channel MOSFET | |
2 | SSM6J502NU |
Toshiba Semiconductor |
Silicon P-Channel MOSFET | |
3 | SSM6J503NU |
Toshiba Semiconductor |
Silicon P-Channel MOSFET | |
4 | SSM6J507NU |
Toshiba |
Silicon P-Channel MOSFET | |
5 | SSM6J50TU |
Toshiba Semiconductor |
Silicon P-Channel MOSFET | |
6 | SSM6J511NU |
Toshiba |
Silicon P-Channel MOSFET | |
7 | SSM6J512NU |
Toshiba |
Silicon P-Channel MOSFET | |
8 | SSM6J51TU |
Toshiba Semiconductor |
Silicon P-Channel MOSFET | |
9 | SSM6J53FE |
Toshiba Semiconductor |
High Current Switching Applications | |
10 | SSM6J06FU |
Toshiba Semiconductor |
Power Management Switch | |
11 | SSM6J07FU |
Toshiba Semiconductor |
Power Management Switch | |
12 | SSM6J08FU |
Toshiba Semiconductor |
Silicon P-Channel MOSFET |