SSM6J505NU Toshiba Semiconductor Silicon P-Channel MOSFET Datasheet, en stock, prix

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SSM6J505NU

Toshiba Semiconductor
SSM6J505NU
SSM6J505NU SSM6J505NU
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Part Number SSM6J505NU
Manufacturer Toshiba (https://www.toshiba.com/) Semiconductor
Description MOSFETs Silicon P-Channel MOS (U-MOS�) SSM6J505NU 1. Applications • Power Management Switches 2. Features (1) 1.2 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 61 mΩ (max) (@VGS...
Features (1) 1.2 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 61 mΩ (max) (@VGS = -1.2 V) RDS(ON) = 30 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 21 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 16 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 12 mΩ (max) (@VGS = -4.5 V) 3. Packaging and Pin Assignment UDFN6B SSM6J505NU 1.2.5.6 Drain 3. Gate 4. Source ©2018-2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2012-05 2021-09-17 Rev.5.0 SSM6J505NU 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25�) Characteristics Symbol Rating Unit Drain-sou...

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